InxGa1ÀxN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
نویسندگان
چکیده
Indium–gallium nitride (InxGa12xN) single-quantum-well ~SQW! light emitting diodes ~LEDs!, grown by metalorganic chemical vapor deposition on sapphire, were transferred onto Si substrates. The thin-film InxGa12xN SQW LED structures were first bonded onto a n -Si substrate using a transient-liquid-phase Pd–In wafer-bonding process followed by a laser lift-off technique to remove the sapphire growth substrate. Individual, 2503250 mm, LEDs with a backside contact through the n-Si substrate were then fabricated. The LEDs had a typical turn-on voltage of 2.5 V and a forward current of 100 mA at 5.4 V. The room-temperature emission peak for the InxGa12xN SQW LEDs was centered at 455 nm with a full width at half maximum of 19 nm. © 2000 American Institute of Physics. @S0003-6951~00!01143-8#
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